| PART |
Description |
Maker |
| MT49H8M36 MT49H16M18 MT49H32M9 |
288Mb CIO Reduced Latency
|
MICRON[Micron Technology]
|
| MT49H16M18C MT49H32M9C MT49H16M18CFM-XX MT49H32M9C |
288Mb SIO REDUCED LATENCY(RLDRAM II)
|
Micron Technology, Inc.
|
| MT49H8M36 |
288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II
|
Micron Technology
|
| Z8036 Z8536 |
CAP POLYPROPYLENE .0015UF 50V 1%
Z-CIO AND CIO COUNTER/TIMER AND PARALLEL I/O UNIT
|
ZiLOG, Inc.
|
| CY7C1568KV18-550BZXC |
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency); Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| GS82582QT20GE-375 GS82582QT20GE-450I GS82582QT20GE |
288Mb SigmaQuad-II TM Burst of 2 SRAM
|
GSI Technology
|
| GS82582DT19AGE-400 GS82582DT19AGE-375 GS82582DT19A |
288Mb SigmaQuad-II TM Burst of 4 SRAM
|
GSI Technology
|
| K4C89083AF-ACF5 K4C89083AF-ACF6 K4C89083AF-ACFB K4 |
288Mb x18 Network-DRAM2 Specification
|
Samsung Electronic
|
| IS49NLC18160 IS49NLC36800 IS49NLC93200 |
288Mb (x9, x18, x36) Common I/O RLDRAM 2 Memory
|
Integrated Silicon Solution, Inc
|
| LTC2410 LTC2410CGN 2410I LTC2410C LTC2410I LTC2410 |
From old datasheet system
24-Bit No Latency ADC with Differential Input and Differential Reference
24 Bit No Latency ADC
|
Linear Technology
|
| IS61DDB41M36-250M3 IS61DDB42M18-250M3 |
36 Mb (1M x 36 & 2M x 18) DDR-II (Burst of 4) CIO Synchronous SRAMs
|
Integrated Silicon Solution, Inc.
|
| IS61DDB42M36-250M3 IS61DDB42M36-250M3L IS61DDB42M3 |
72 Mb (2M x 36 & 4M x 18) DDR-II (Burst of 4) CIO Synchronous SRAMs
|
Integrated Silicon Solution, Inc
|
